BCP56-10T3G

BCP56-10T3G

$0.32
  • Description:TRANS NPN 80V 1A SOT223
  • Series:-

SKU:1e7eb8bb0d4a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN 80V 1A SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:1.5 W
  • Frequency - Transition:130MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223 (TO-261)
  • Grade:-
  • Qualification:-

Download product information

BCP56-10T3G

Overview

The onsemi BCP56-10T3G is a discontinued NPN Silicon Epitaxial transistor housed in an SOT-223 package. It features a collector-emitter voltage (VCEO) of 80 Vdc, a continuous collector current (IC) of 1 Adc, and a peak collector current (ICM) of 2 Adc. The device provides a total power dissipation (PD) of 1.5 W at 25°C ambient temperature with a derating factor of 12 mW/°C above this threshold. DC current gain (hFE) ranges from 100 to 160 when tested at IC = 150 mA and VCE = 2.0 V. The unit operates within a junction and storage temperature range of -65 to 150 °C.

Feature Summary

  • Designed for medium power surface mount applications utilizing the SOT-223 package
  • Formed leads absorb thermal stress during wave or reflow soldering processes
  • Capable of high continuous collector current up to 1.0 A

Applications

  • Audio amplifier applications
  • Linear voltage regulators
  • MOSFET drivers

Procurement Notes

Verify component status before design integration as the BCP56-10T3G is officially listed as discontinued by onsemi. Confirm availability through authorized distributors or secondary markets if sourcing is required. Review the manufacturer's guidance regarding new design recommendations for obsolete parts. Ensure compliance with RoHS and Pb-Free packaging standards specified in the datasheet documentation.

Selection Notes

Select this component for general-purpose NPN switching and amplification tasks requiring medium power handling in surface mount configurations. Consider the specific hFE binning requirements for linear applications where gain consistency is critical. Evaluate thermal management strategies given the 1.5 W dissipation limit and 83.3 °C/W thermal resistance characteristics in standard PCB mounting scenarios.

Part Context

This device belongs to the BCP56 Series of NPN silicon epitaxial transistors manufactured by onsemi. The series includes complementary PNP types such as the BCP53T1G. The product line is engineered for audio and power management circuits, offering robust performance in the SOT-223 form factor designed for efficient heat dissipation and reliable surface mounting on printed circuit boards.

Replacement Considerations

Consult onsemi representatives for current alternatives as the BCP56-10T3G is not recommended for new designs. Cross-reference specifications with active series members like the BCP56-16T3G or BCP56T3G, noting that ordering suffixes may indicate different gain bins or packaging quantities rather than functional changes.

BCP56-10T3GBCP56-10T3G
$0.32
Buy Now