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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：150MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The BCP5616TA is an NPN silicon planar medium power transistor manufactured by Diodes Incorporated, housed in a SOT-223 surface-mount package. It features a collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device offers a DC current gain (hFE) range of 100 to 250 at IC=150mA, VCE=2V. Key electrical parameters include a collector-base breakdown voltage of 100 V, emitter-base voltage of 5 V, and saturation voltage of 0.5 V at 500 mA. Power dissipation reaches 2 W at 25°C ambient temperature, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Designed for audio frequency drivers and output stages
- Provides high collector current capability with low saturation voltage
- Utilizes a molded plastic SOT-223 case material
Applications
- Audio frequency driver circuits
- Output stage configurations
- Linear voltage regulators
- MOSFET drivers
Procurement Notes
Verify the specific hFE binning suffix '16' against official Diodes Incorporated documentation to confirm the required gain range of 100 to 250. Ensure the SOT-223 package orientation matches the target PCB footprint. Confirm RoHS compliance status through the manufacturer's latest environmental declarations prior to final procurement decisions.
Selection Notes
Select this component when a single NPN transistor with 1 A continuous current handling is required in a compact SMD form factor. The BCP5616TA variant provides higher minimum current gain compared to the BCP56-10 version. Consider the complementary BCP53 series if PNP matching is necessary for push-pull amplifier topologies or balanced output stages.
Part Context
This part belongs to the BCP54/55/56 family of NPN medium power transistors produced by Diodes Incorporated. The family shares similar physical dimensions and thermal characteristics but varies in current gain specifications. The BCP56 specifically targets applications requiring robust switching performance and moderate power dissipation capabilities within standard surface-mount layouts.
Replacement Considerations
Direct substitutes include the Nexperia BCP56-16T and STMicroelectronics BCP56-16, which share identical pinouts and electrical ratings. Verify that alternative manufacturers maintain the same SOT-223 mechanical outline and thermal resistance values to ensure compatibility with existing board designs.
