BCP56MTWG

$0.15

Description：TRANS NPN 80V 1A 3WDFNW
Series：-

SKU:5f3564f6d140 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 80V 1A 3WDFNW
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
Power - Max：1.5 W
Frequency - Transition：140MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：3-WDFN Exposed Pad
Supplier Device Package：3-WDFNW (2x2)
Grade：-
Qualification：-

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BCP56MTWG

Overview

The onsemi BCP56MTWG is a silicon NPN medium power bipolar junction transistor (BJT) housed in a WDFNW-3 (2x2 mm) surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A, with a peak pulse current capability of 2 A. The device exhibits a DC current gain (hFE) range of 63 to 250 and a transition frequency (fT) of 140 MHz. Power dissipation is rated at 1.5 W, with an operating temperature range from -65 °C to +150 °C.

Feature Summary

High continuous collector current capability for medium power applications
Low collector-emitter saturation voltage for efficient switching
Complementary PNP types available within the same series

Applications

Audio amplifier driver stages
General-purpose switching circuits
Output stage configurations

Procurement Notes

Verify the specific suffix MTWG against the manufacturer's official datasheet to confirm the WDFNW-3 package and reel packaging details. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before procurement.

Selection Notes

Select this component when a compact NPN transistor with 80 V rating and 1 A current capacity is required in a small footprint. Consider the hFE binning (63-250) for gain consistency needs. Evaluate thermal management capabilities given the 1.5 W dissipation limit in the specified package.

Part Context

This part belongs to the BCP56M series of NPN medium power transistors designed for surface-mount applications. It serves as a high-performance alternative to traditional through-hole packages, offering similar electrical characteristics in a significantly smaller form factor suitable for dense PCB layouts.

Replacement Considerations

Compatible substitutes include the BCP56-16TF (Nexperia) and BCP5616TC (Diodes Inc.), which offer similar electrical specifications in SOT-223 packages. Verify pinout compatibility and thermal resistance differences when substituting.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.