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The BCR 101L3 E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies. It features a built-in bias resistor network with R1 and R2 both at 100 kΩ, resulting in a typical resistor ratio of 1. The device operates with a collector-emitter voltage (VCEO) of 50 V and a maximum collector current of 50 mA. Total power dissipation is rated at 250 mW for the TSLP-3-4 package. Key electrical characteristics include a DC current gain (hFE) of 70 minimum, a transition frequency (fT) of 100 MHz, and a junction temperature range up to 150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package type, as variations exist within the BCR 101 family. Check for RoHS compliance status and ensure the part meets environmental standards for your intended deployment region before finalizing procurement orders.
Select this component when a compact NPN digital transistor with high input impedance is required. The 100 kΩ internal resistors reduce external component count compared to discrete solutions. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 250 mW power dissipation limit in the chosen package configuration.
This component belongs to the BCR 101 series of NPN silicon digital transistors from Infineon Technologies. The 'L3' designation specifically identifies the TSLP-3-4 surface-mount package variant. Other variants in the series include the F and T types, which utilize different physical packages such as TSFP-3 and SC75 while maintaining identical electrical performance specifications.
Direct replacements must match the NPN polarity, 50 V VCEO rating, and integrated 100 kΩ/100 kΩ resistor network. Verify pinout compatibility between the TSLP-3-4 package and potential substitutes. Cross-reference datasheets for equivalent transition frequencies and saturation voltages to ensure functional parity in existing designs.