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The BCR 101T E6327 is an NPN silicon digital transistor from Infineon Technologies, packaged in SC75. It integrates a bias resistor network with R1 and R2 both at 100 kΩ. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 50 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 109°C. The device features a DC current gain (hFE) minimum of 70, a transition frequency (fT) of 100 MHz, and operates within a junction temperature range of -65°C to 150°C.
Verify the specific package variant against the ordering code, as the BCR 101 series includes multiple packages such as TSFP-3, TSLP-3-4, and SC75. Confirm that the selected component meets all required thermal and electrical specifications for the intended application environment before finalizing procurement decisions.
Select this component when a single NPN digital transistor with high input resistance is required. Ensure the application current does not exceed 50 mA and the voltage rating remains within 50 V. Consider the SC75 package dimensions and thermal characteristics if space or heat dissipation constraints are critical factors in the design.
This part belongs to the BCR 101 family of NPN silicon digital transistors. The 'T' suffix indicates the SC75 surface-mount package. Other variants in the series utilize different packages like TSFP-3 or TSLP-3-4, which may have distinct thermal resistance values and physical footprints despite sharing similar electrical characteristics.
Direct substitutes must match the NPN configuration, 50 V VCEO rating, 50 mA IC limit, and integrated 100 kΩ/100 kΩ resistor network. Verify pinout compatibility and package dimensions to ensure mechanical fit without redesigning the PCB layout.