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The BCR 103F E6327 is a single NPN silicon digital transistor manufactured by Infineon Technologies. It integrates bias resistors R1 and R2, both with a typical value of 2.2 kΩ. The device operates within a collector-emitter voltage (VCEO) range of up to 50 V and supports a continuous collector current of 100 mA. It features a transition frequency (fT) of 140 MHz at IC = 10 mA. The component is housed in the TSFP-3 surface-mount package and is supplied in reels containing 3,000 pieces under the E6327 packing code.
Verify the specific ordering suffix against official documentation to confirm the exact package type and reel quantity. Confirm RoHS compliance status through the manufacturer's latest datasheet or product database before finalizing procurement plans.
Select this component when a compact NPN digital transistor with integrated 2.2 kΩ bias resistors is required. Ensure the operating voltage does not exceed 50 V and that the thermal dissipation requirements fit within the TSFP-3 package limits.
This part belongs to the BCR103 family of NPN silicon digital transistors. Variants such as BCR103L3 and BCR103T share similar electrical characteristics but differ in packaging options like SC75 or TSLP-3-4.
Check for direct substitutes within the same BCR series or equivalent NPN digital transistors from other manufacturers. Verify pinout compatibility and resistor values before substitution.
The BCR 103F includes two built-in bias resistors, R1 and R2, both typically valued at 2.2 kΩ.
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
The BCR 103F variant utilizes the TSFP-3 surface-mount package.