BCR 108 B6327

BCR 108 B6327

$0.02
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:02e2aa0a5e36 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:170 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR 108 B6327

Overview

The BCR 108 B6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-23 package. It integrates bias resistors with R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA and VCE = 5 V. The transition frequency reaches 170 MHz at IC = 10 mA. Total power dissipation is rated at 200 mW for junction temperatures up to 102°C. Operating temperature ranges from -65°C to +150°C.

Feature Summary

  • Integrates internal bias resistors to simplify circuit design
  • Provides high switching speed with a transition frequency of 170 MHz
  • Qualified according to AEC-Q101 standards

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if automotive qualification is necessary for the intended application environment.

Selection Notes

Select this component when a single NPN digital transistor with integrated biasing is required. Ensure the 50 V collector-emitter voltage and 100 mA current limits accommodate the load requirements. Verify that the SOT-23 package dimensions fit the available PCB space and thermal management constraints.

Part Context

This part belongs to the BCR108 series, which includes variants like the BCR108S (dual transistors in SOT-363) and BCR108W (SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical packaging to suit different layout densities.

Replacement Considerations

Check for other BCR108 series members such as BCR108S or BCR108W if package changes are acceptable. Cross-reference with other NPN digital transistors having similar R1/R2 ratios and hFE values, ensuring voltage and current ratings match.

BCR 108 B6327BCR 108 B6327
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