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The BCR 108 B6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-23 package. It integrates bias resistors with R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA and VCE = 5 V. The transition frequency reaches 170 MHz at IC = 10 mA. Total power dissipation is rated at 200 mW for junction temperatures up to 102°C. Operating temperature ranges from -65°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm the exact package variant and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if automotive qualification is necessary for the intended application environment.
Select this component when a single NPN digital transistor with integrated biasing is required. Ensure the 50 V collector-emitter voltage and 100 mA current limits accommodate the load requirements. Verify that the SOT-23 package dimensions fit the available PCB space and thermal management constraints.
This part belongs to the BCR108 series, which includes variants like the BCR108S (dual transistors in SOT-363) and BCR108W (SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical packaging to suit different layout densities.
Check for other BCR108 series members such as BCR108S or BCR108W if package changes are acceptable. Cross-reference with other NPN digital transistors having similar R1/R2 ratios and hFE values, ensuring voltage and current ratings match.