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The BCR 108F E6327 is an NPN silicon digital transistor from the Infineon BCR108 series, housed in a SOT-23 surface-mount package. It integrates a single transistor with built-in bias resistors: R1 is typically 2.2 kΩ and R2 is 47 kΩ, yielding a resistor ratio of 0.047. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Total power dissipation is rated at 200 mW, with a junction temperature limit of 150°C. It features a minimum DC current gain (hFE) of 70 and a transition frequency of 170 MHz.
Verify the specific ordering suffix F6327 against official Infineon documentation to confirm exact packaging configuration and marking details. Ensure compatibility with existing PCB footprints for the SOT-23 package. Confirm that the component meets all required environmental and reliability specifications for the intended application environment before finalizing procurement.
Select this component when a single NPN digital switch with a 2.2 kΩ base resistor is required. The 50 V rating and 100 mA current capacity suit low-power switching tasks. Consider the BCR108S variant if dual isolated transistors are needed, or the BCR108W for SOT-323 packaging. Verify thermal management requirements based on the 200 mW dissipation limit in the SOT-23 package.
This part belongs to the BCR108 family of NPN silicon digital transistors. The family includes variants like BCR108S (dual transistor in SOT-363) and BCR108W (single transistor in SOT-323). All share similar electrical characteristics but differ in pinout, package type, and power dissipation capabilities. The BCR108F E6327 specifically denotes the standard single-transistor SOT-23 version.
Direct substitutes within the same family include BCR 108 E6433. For different packages, consider BCR 108 W (SOT-323) or BCR 108 S (SOT-363). Cross-brand replacements require matching VCEO, IC, R1 value, and package dimensions.