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The BCR 108L3 E6327 is an NPN Silicon Digital Transistor from the Infineon BCR108 series, housed in a SOT-23 package. It integrates bias resistors with typical values of R1=2.2 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW at case temperatures up to 102°C. The device features a DC current gain (hFE) minimum of 70 at IC=5 mA and VCE=5 V, a transition frequency (fT) of 170 MHz, and operates within a junction temperature range of -65°C to 150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and Pb-free status as specified in the datasheet. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity and performance specifications.
Select this component for single NPN digital transistor applications requiring integrated biasing. Consider the SOT-23 package constraints and thermal resistance characteristics when designing for specific power dissipation limits. Verify that the required collector current and voltage ratings align with the system's operational demands.
This part belongs to the BCR108 series, which includes variants like BCR108S (dual transistors in SOT-363) and BCR108W (single transistor in SOT-323). All share similar electrical characteristics but differ in packaging and pin configurations. The series is designed for general-purpose digital switching and interface tasks in consumer and industrial electronics.
Direct substitutes within the same series include BCR108E6327 (SOT-23) and BCR108W E6327 (SOT-323), provided the package footprint matches the design. Cross-package replacements require schematic and PCB layout modifications due to differing pinouts and physical dimensions.