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The BCR 108T E6327 is an NPN Silicon Digital Transistor from Infineon Technologies, packaged in SOT-23. It integrates a single transistor with built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a minimum DC current gain (hFE) of 70 at IC = 5 mA. The device features a transition frequency (fT) of 170 MHz and operates within a junction temperature range of -65°C to +150°C. It is qualified according to AEC-Q101 standards.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required package type and tape-and-reel specifications. Ensure compliance with RoHS requirements and check for any end-of-life notifications regarding production status before finalizing procurement plans.
Select this component when a compact NPN digital transistor solution is required for low-voltage switching applications. The integrated resistor network eliminates external components, reducing board space. Verify that the 100 mA collector current and 50 V voltage ratings align with the load requirements of the target application circuit.
This part belongs to the BCR108 series, which includes variants like the BCR108S (dual transistors in SOT-363) and BCR108W (single transistor in SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical packaging to suit different PCB layout constraints.
Direct substitutes within the same family include BCR108E6327 (SOT-23) and BCR108WE6327 (SOT-323). Cross-brand replacements require careful verification of pinout compatibility, hFE ranges, and thermal resistance values to ensure functional equivalence in existing designs.
The typical internal bias resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.
Yes, the BCR108 series is qualified according to the AEC-Q101 standard.
The maximum continuous collector current (IC) is rated at 100 mA.