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The BCR 112F E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies. It features a single configuration housed in a surface-mount SOT-23-3 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device incorporates an integrated base resistor with a typical value of 4.7 kOhms and a typical resistance ratio of 0.47. Minimum DC current gain (hFE) is specified at 20, with a transition frequency of 140 MHz and power dissipation rated at 200 mW. Operating temperature ranges from -65°C to +150°C.
Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Check for any active obsolescence notices or lifecycle changes prior to finalizing procurement plans.
Select this component when a compact NPN digital switch with moderate current handling is required. Ensure the 100 mA collector current limit meets load requirements. Verify that the 50 V voltage rating exceeds the maximum circuit potential. Compare the 4.7 kOhm internal resistance against drive source capabilities to ensure adequate base current.
This part belongs to Infineon's BCR series of pre-biased digital transistors. These components integrate bipolar junction transistors with built-in resistors to reduce board space and assembly costs. The E6327 suffix typically denotes specific packaging and ordering variants within the broader product family.
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may differ in internal resistance values or hFE characteristics. Validate pinout compatibility and thermal resistance before implementing alternative parts.