BCR 112L3 E6327

Overview

The BCR 112L3 E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single NPN transistor with built-in bias resistors, specifically R1 and R2, both valued at 4.7 kΩ. The device operates with a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 50 V. The maximum emitter-base voltage (VEBO) is rated at 10 V. It supports a continuous collector current (IC) of up to 100 mA. Total power dissipation (Ptot) reaches 250 mW when the case temperature (TS) is maintained at or below 135°C. The junction temperature (Tj) limit is 150°C, with a storage temperature range from -65°C to 150°C. The transition frequency (fT) is typically 140 MHz at IC = 10 mA and VCE = 5 V. DC current gain (hFE) is minimum 20 at IC = 5 mA and VCE = 5 V. Collector-emitter saturation voltage (VCEsat) is max 0.3 V at IC = 10 mA and IB = 0.5 mA. Input off voltage (Vi(off)) ranges from 0.8 V to 1.5 V, while input on voltage (Vi(on)) ranges from 1 V to 2.5 V. The component is housed in a TSLP-3 package.

Feature Summary

• Integrates an NPN transistor with dual 4.7 kΩ bias resistors for simplified circuit design
• Provides galvanic isolation within a compact surface-mount package
• Supports high-frequency switching applications with a typical transition frequency of 140 MHz

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging details and compliance status. Ensure the requested quantity matches the manufacturer's standard reel sizes. Confirm thermal management requirements align with the specified case temperature limits for optimal power dissipation performance.

Selection Notes

Select this component for designs requiring a pre-biased NPN switch with integrated pull-up and pull-down resistors. The TSLP-3 package offers a compact footprint suitable for space-constrained layouts. Consider the 250 mW power dissipation rating and thermal resistance characteristics when designing heat dissipation strategies for the application environment.

Part Context

The BCR 112L3 belongs to the BCR112 family of NPN silicon digital transistors produced by Infineon Technologies. This family includes variants such as BCR112, BCR112F, BCR112T, BCR112U, and BCR112W, which differ primarily in their package types and associated thermal characteristics. The L3 variant specifically utilizes the TSLP-3 package configuration.

Replacement Considerations

Direct substitutes include other BCR112 family members like BCR112F or BCR112T if package compatibility allows. Cross-brand equivalents should be evaluated based on matching VCEO, IC, and resistor values.