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The BCR112T E6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single component. The device features built-in bias resistors of 4.7 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 109°C. The transition frequency (fT) is typically 140 MHz.
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging details and compliance status. Ensure the selected variant matches the required thermal resistance and power dissipation limits for the intended operating environment. Cross-reference pin configurations carefully as they vary across the BCR112 family.
Select this component when dual isolated NPN functionality is required in a compact SOT-323 footprint. Consider the 250 mW power dissipation limit and the specific thermal resistance values provided for the T variant. Verify that the integrated 4.7 kΩ resistor ratio meets the input drive requirements of the target application.
This part belongs to the BCR112 series of NPN silicon digital transistors. The series includes various packages such as SOT23, TSFP-3, TSLP-3-4, SC75, SC74, and SOT323. The BCR112T specifically utilizes the SOT-323 package, distinguishing it by its physical dimensions and thermal characteristics compared to other variants like the BCR112 or BCR112F.
Direct substitutes within the same family include BCR112, BCR112F, BCR112L3, BCR112U, and BCR112W. Verify package compatibility and thermal performance before substitution.