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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSFP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：160 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：PG-TSFP-3
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Overview
The BCR114F E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies, housed in a SOT-23 surface-mount package. It integrates bias resistors R1 (4.7 kΩ) and R2 (10 kΩ). Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature up to 128°C. The device features a DC current gain of 30 at 5 mA, a transition frequency of 160 MHz, and operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Integrated bias resistor network for simplified circuit design
- High-speed switching capability with defined transition frequency
- Robust thermal performance with specified power dissipation limits
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm reel specifications and packaging details. Ensure component authenticity through authorized channels and validate RoHS compliance status prior to integration into production workflows.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for high-frequency switching or interface tasks. Confirm that the SOT-23 package dimensions and thermal resistance characteristics align with the target board layout and operating temperature constraints.
Part Context
This part belongs to the BCR114 series of NPN silicon digital transistors from Infineon Technologies. The series offers various package options including SOT-23, TSFP-3, TSLP-3-4, and SC75, providing flexibility for different mounting styles while maintaining consistent electrical performance characteristics across variants.
Replacement Considerations
Consult official Infineon replacement guides for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers' components.
FAQ
What are the values of the integrated bias resistors?
The BCR114F includes a base resistor R1 of 4.7 kΩ and an emitter resistor R2 of 10 kΩ.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
What is the transition frequency of the device?
The transition frequency (fT) is typically 160 MHz under standard test conditions.
