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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSLP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：160 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：PG-TSLP-3-4
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Overview
The BCR 114L3 E6327 is an NPN silicon digital transistor from the Infineon BCR114 series, housed in a SC75 package. It integrates internal bias resistors with R1 at 4.7 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 30 at 5 mA, a transition frequency of 160 MHz, and a maximum total power dissipation of 250 mW at a case temperature up to 135°C.
Feature Summary
- Integrated bias resistor network for simplified circuit design
- High-speed switching capability with defined transition frequency
- Robust thermal performance within specified operating temperatures
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific SC75 package variant when sourcing replacements, as the BCR114 family spans multiple packages including SOT-23 and TSFP-3. Confirm that the ordering suffix E6327 corresponds to the required reel packaging configuration. Cross-reference datasheet electrical limits against actual load conditions to ensure compliance with absolute maximum ratings.
Selection Notes
Select this component when a pre-biased NPN transistor is required for logic-level interfacing or low-current switching tasks. The integrated resistor values eliminate external components, reducing board space. Ensure the application current remains below 100 mA and verify that the thermal resistance allows adequate heat dissipation for the intended duty cycle.
Part Context
This part belongs to the BCR114 family of NPN digital transistors manufactured by Infineon Technologies. The family includes variants such as BCR114, BCR114F, and BCR114T, which differ primarily in their physical package types like SOT-23, TSFP-3, and TSLP-3-4. All variants share similar electrical characteristics but vary in thermal resistance and mechanical footprint.
Replacement Considerations
BCR114, BCR114F, BCR114T
FAQ
What are the specific values of the built-in bias resistors?
The BCR 114L3 features a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ.
What is the maximum power dissipation for the SC75 package?
The total power dissipation (Ptot) for the BCR114L3 in the SC75 package is 250 mW, provided the case temperature (TS) does not exceed 135°C.
How is the pin configuration defined for this component?
Pin 1 is the Base (B), Pin 2 is the Emitter (E), and Pin 3 is the Collector (C).
