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The BCR 114T E6327 is an NPN silicon digital transistor from Infineon Technologies, packaged in SC-75. It integrates a bias resistor network with R1 at 4.7 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation reaches 250 mW at a case temperature up to 135°C. The transition frequency is typically 160 MHz, and the DC current gain (hFE) is specified at a minimum of 30.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required package type and reel specifications. Ensure compliance with RoHS directives and check for any relevant automotive qualification status if applicable to the target system environment.
Select this component when a compact NPN digital transistor with integrated biasing is required. The SC-75 package offers a small footprint suitable for space-constrained designs. Evaluate thermal performance against the maximum junction temperature limit of 150°C and ensure the operating conditions remain within the specified electrical parameters for reliable operation.
This part belongs to the BCR114 series of NPN silicon digital transistors. The series includes variants such as BCR114F and BCR114L3, which differ primarily in their physical packaging configurations while maintaining similar electrical characteristics. The 'T' suffix indicates the specific SC-75 surface-mount package variant.
Direct substitutes include other BCR114 series variants like BCR114F or BCR114L3, provided the package form factor is compatible with the existing PCB layout. Cross-brand replacements require verification of pinout compatibility, voltage ratings, and current handling capabilities.