BCR 116F E6327

Overview

The BCR 116F E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single NPN bipolar junction transistor with internal biasing resistors, packaged in a surface-mount SOT-23-3 (PG-SOT23) housing. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Internal resistance values include a base resistor of 4.7 kOhms and an emitter resistor of 47 kOhms. The component operates within a temperature range of -65°C to +150°C and has a maximum power dissipation of 200 mW.

Feature Summary

• Integrates NPN transistor with pre-biased resistors for simplified circuit design
• High switching speed capability suitable for high-frequency applications
• Automotive-grade qualification compliant with AEC-Q100 standards

Applications

• General-purpose switching circuits
• Driver stages for relays and solenoids
• Logic level translation interfaces

Procurement Notes

Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm end-of-life status and discontinuation notifications prior to finalizing procurement plans, as availability may be restricted.

Selection Notes

Select this component when an NPN digital transistor with a 4.7 kOhm base resistor and 47 kOhm emitter resistor is required. Ensure the 100 mA collector current limit and 50 V voltage rating align with the target application's electrical demands.

Part Context

This part belongs to the Infineon BCR116 series of digital transistors. It shares the same package and general electrical characteristics as other variants in the family, distinguished primarily by its specific internal resistor network configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.