BCR 116T E6327

Overview

The BCR 116T E6327 is an NPN Silicon Digital Transistor from the Infineon BCR116 series, housed in a SC-75 package. It integrates bias resistors R1 (4.7 kΩ) and R2 (47 kΩ). Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a DC current gain (hFE) of at least 70. The device features a transition frequency of 150 MHz and supports a junction temperature up to 150°C.

Feature Summary

• Integrates built-in bias resistors for simplified circuit design
• Designed for switching, inverter, interface, and driver applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision and package marking codes match specifications. Ensure storage conditions comply with moisture sensitivity levels. Validate thermal management requirements against application constraints before integration.

Selection Notes

Select this component when a single NPN digital transistor with specific internal resistor ratios is required. The SC-75 package offers distinct pinout characteristics compared to SOT-23 or SOT-323 variants within the same family. Evaluate thermal resistance values relative to expected power dissipation in the target environment.

Part Context

This part belongs to the BCR116 family of NPN silicon digital transistors. Variants such as BCR116S and BCR116W share similar electrical characteristics but differ in packaging and pin configurations. The BCR116T specifically utilizes the SC-75 package format.

Replacement Considerations

BCR116WH6327XTSA1