BCR 119 E6433

BCR 119 E6433

$0.02
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:b2e4ec68ba28 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR 119 E6433

Overview

The BCR 119 E6433 is a single NPN silicon digital transistor manufactured by Infineon Technologies. It integrates an internal base resistor (R1) with a typical value of 4.7 kΩ, designed to simplify switching circuit designs. The device features a collector-emitter breakdown voltage (V(BR)CEO) of 50 V and supports a maximum DC collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 5 mA and VCE = 5 V, and a transition frequency (fT) of 150 MHz. The component is housed in a surface-mount SOT-23 package.

Feature Summary

  • Integrates a built-in input resistor to reduce external component count
  • Optimized for high-speed switching applications with defined saturation voltages
  • Qualified according to AEC-Q101 automotive standards

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon sales offices prior to procurement.

Selection Notes

Select this component when a single NPN digital transistor with a 4.7 kΩ base resistor is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the load current remains within the 100 mA limit. Verify thermal dissipation requirements against the 200 mW power rating in the SOT-23 package.

Part Context

This part belongs to the BCR119 series of NPN silicon digital transistors. The series includes variants such as BCR119F, BCR119S, and BCR119W, which differ primarily in packaging (TSFP-3, SOT363, SOT323). The E6433 suffix typically denotes the standard SOT-23 package configuration used in general-purpose electronics.

Replacement Considerations

Direct replacements must match the NPN polarity, 50 V VCEO rating, 100 mA Ic limit, and approximately 4.7 kΩ internal base resistance. Verify pinout compatibility for SOT-23 packages before substitution.

BCR 119 E6433BCR 119 E6433
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