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The BCR 119 E6433 is a single NPN silicon digital transistor manufactured by Infineon Technologies. It integrates an internal base resistor (R1) with a typical value of 4.7 kΩ, designed to simplify switching circuit designs. The device features a collector-emitter breakdown voltage (V(BR)CEO) of 50 V and supports a maximum DC collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 5 mA and VCE = 5 V, and a transition frequency (fT) of 150 MHz. The component is housed in a surface-mount SOT-23 package.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon sales offices prior to procurement.
Select this component when a single NPN digital transistor with a 4.7 kΩ base resistor is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the load current remains within the 100 mA limit. Verify thermal dissipation requirements against the 200 mW power rating in the SOT-23 package.
This part belongs to the BCR119 series of NPN silicon digital transistors. The series includes variants such as BCR119F, BCR119S, and BCR119W, which differ primarily in packaging (TSFP-3, SOT363, SOT323). The E6433 suffix typically denotes the standard SOT-23 package configuration used in general-purpose electronics.
Direct replacements must match the NPN polarity, 50 V VCEO rating, 100 mA Ic limit, and approximately 4.7 kΩ internal base resistance. Verify pinout compatibility for SOT-23 packages before substitution.