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The BCR119L3E6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a TSLP-3-4 surface-mount package. It integrates a single transistor with a built-in input resistor (R1) of 4.7 kΩ. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V and a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA. The device supports a maximum continuous collector current of 100 mA and features a transition frequency (fT) of 150 MHz. Total power dissipation reaches 250 mW at a case temperature up to 135°C, with a junction temperature limit of 150°C.
Verify the specific ordering suffix E6327 to confirm reel packaging specifications. Ensure compatibility with the TSLP-3-4 footprint during PCB layout. Confirm RoHS compliance status through official documentation prior to integration into production assemblies.
Select this component when a pre-biased NPN switch is required to reduce external component count. The 4.7 kΩ internal resistor value dictates the drive current requirements. Verify that the 50 V collector-emitter voltage rating meets the load conditions and that the thermal resistance characteristics are sufficient for the intended operating environment.
This part belongs to the BCR119 series of digital transistors, which includes variants like BCR119F, BCR119S, and BCR119T. These devices share similar electrical characteristics but differ in physical packaging and pin configurations. The L3 suffix specifically denotes the TSLP-3-4 package type within this product family.
Direct substitutes within the same series include BCR119F and BCR119T, though package differences must be accounted for. Cross-manufacturer equivalents should match the NPN configuration, 50 V rating, and integrated resistor value.