BCR 129L3 E6327

Overview

The BCR 129L3 E6327 is an NPN silicon digital transistor from Infineon Technologies, packaged in a TSLP-3-4 (SOT363) configuration. It integrates a single transistor with a built-in bias resistor of 10 kΩ. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 135°C. The device features a DC current gain (hFE) range of 120 to 630 and a transition frequency (fT) of 150 MHz.

Feature Summary

• Integrates a single NPN transistor with a built-in 10 kΩ input bias resistor for simplified circuit design.

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure component authenticity by checking markings against the provided pin configuration table for the TSLP-3-4 package.

Selection Notes

Select this component when a compact NPN digital switch with a 10 kΩ base resistor is required. The TSLP-3-4 package offers a small footprint suitable for space-constrained designs. Verify that the 100 mA collector current and 50 V voltage ratings meet the load requirements of the target application.

Part Context

This part belongs to the BCR 129 series of NPN silicon digital transistors manufactured by Infineon Technologies. The 'L3' suffix specifically denotes the TSLP-3-4 (SOT363) surface-mount package variant. Other variants in the series utilize different packages such as SOT23 or SC75.

Replacement Considerations

BCR129E6327HTSA1