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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：150 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：PG-SC75-3D
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Overview
The BCR 129T E6327 is a single NPN silicon digital transistor from Infineon Technologies, housed in an SC-75 package. It integrates a built-in bias resistor (R1) with a typical value of 10 kΩ and a range of 7 to 13 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, a transition frequency (fT) of 150 MHz, and a maximum total power dissipation (Ptot) of 250 mW. The component operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a built-in 10 kΩ input bias resistor for simplified circuit design.
- Provides high DC current gain (hFE) up to 630 for effective signal amplification and switching.
- Features a transition frequency (fT) of 150 MHz suitable for high-speed switching applications.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance and lead times directly with authorized distributors or the manufacturer before placing orders, as supply chain conditions may change.
Selection Notes
Select this component when a single NPN digital transistor with a 10 kΩ base resistor is required in an SC-75 package. Ensure the application demands a collector current up to 100 mA and a breakdown voltage of 50 V. Verify that the thermal requirements align with the specified 250 mW power dissipation limit.
Part Context
This part belongs to the BCR129 family of NPN silicon digital transistors manufactured by Infineon Technologies. The family includes various packages such as SOT-23, TSFP-3, TSLP-3-4, SOT-363, and SOT-323. The 'T' designation specifically identifies the SC-75 package variant within this product line.
Replacement Considerations
Check for direct replacements within the BCR129 family with different package options if pin compatibility allows. Verify equivalent specifications for other manufacturers' single NPN digital transistors with 10 kΩ internal resistors and similar current/voltage ratings.
FAQ
What is the typical value of the built-in input resistor?
The typical value of the built-in input resistor (R1) is 10 kΩ, with a specified range of 7 kΩ to 13 kΩ.
What is the maximum collector current rating?
The maximum continuous collector current (IC) is rated at 100 mA.
What is the DC current gain range?
The DC current gain (hFE) ranges from a minimum of 120 to a maximum of 630, measured at IC = 5 mA and VCE = 5 V.
