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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR 133 B6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-23-3 surface-mount package. It integrates bias resistors with typical values of R1 = 10 kΩ and R2 = 10 kΩ, yielding a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 30 at IC = 5 mA, a transition frequency (fT) of 130 MHz, and a maximum power dissipation of 200 mW. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Integrates internal bias resistors for simplified circuit design
- Qualified according to AEC-Q101 automotive standards
- Provides high-speed switching capabilities with defined input thresholds
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Drive circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any regional distribution restrictions or end-of-life notices before finalizing procurement plans.
Selection Notes
Select this component when a single NPN digital transistor with a 10 kΩ base resistor is required. Ensure the application voltage does not exceed 50 V and the load current remains within the 100 mA limit. Verify thermal management requirements against the 200 mW power dissipation rating.
Part Context
This part belongs to the BCR133 series of NPN silicon digital transistors. The series includes variants such as BCR133S (dual isolated transistors in SOT-363) and BCR133W (single transistor in SOT-323). All share similar electrical characteristics but differ in packaging and pin configurations.
Replacement Considerations
Direct substitutes must match the NPN polarity, 50 V VCEO, 100 mA IC, and 10 kΩ/10 kΩ resistor configuration. Verify package compatibility (SOT-23-3) and thermal resistance ratings. Cross-reference with other manufacturers' digital transistor equivalents offering identical bias resistor ratios.
FAQ
What are the typical values of the integrated bias resistors?
The typical values are R1 = 10 kΩ and R2 = 10 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR 133 series is qualified according to AEC-Q101 standards.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
