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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSFP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：PG-TSFP-3
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Overview
The BCR 133F B6327 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SOT-23 package. It integrates bias resistors R1 and R2, both nominally 10 kΩ with a ratio of 1. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, a maximum collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 30 at IC = 5 mA. The transition frequency (fT) is typically 130 MHz. Total power dissipation is rated at 200 mW for junction temperatures up to 102°C, with a maximum junction temperature of 150°C.
Feature Summary
- Integrates two internal bias resistors (R1 and R2) to simplify circuit design and reduce component count.
- Designed for switching applications including inverters, interface circuits, and drive circuits.
- Qualified according to AEC-Q101 standards for automotive electronics reliability.
Applications
- Switching in circuit
- Inverter
- Interface circuit
- Drive circuit
Procurement Notes
Verify the specific suffix 'B6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance and Pb-free status as stated in the datasheet. Ensure the ordering part number matches the exact marking code required for the production line. Check for any recent product discontinuation notices or lifecycle changes directly from the manufacturer.
Selection Notes
Select this component when a single NPN digital transistor with 10 kΩ base and emitter resistors is required. The SOT-23 package suits space-constrained surface mount designs. Consider the 50 V collector-emitter voltage and 100 mA current limits for load requirements. Verify thermal performance against the 200 mW dissipation rating at expected operating temperatures.
Part Context
This device belongs to the BCR133 series of NPN Silicon Digital Transistors. Other variants in the series include BCR133S (dual transistors in SOT-363) and BCR133W (single transistor in SOT-323). All share similar electrical characteristics but differ in package type and internal configuration.
Replacement Considerations
Direct substitutes within the same family include BCR 133 E6327 and BCR 133 E6433. These parts share identical electrical specifications and functionality. Verify that the alternative suffix corresponds to the desired packaging format (Reel/Cut Tape) and marking code compatibility.
FAQ
What are the values of the integrated bias resistors?
The BCR 133F includes two internal bias resistors, R1 and R2, both with a nominal value of 10 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR133 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 V.
