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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSFP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：PG-TSFP-3
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Overview
The BCR 133F E6327 is an NPN silicon digital transistor from Infineon Technologies, featuring a built-in bias resistor network with R1 and R2 both at 10 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) of 30 and a transition frequency (fT) of 130 MHz. Total power dissipation reaches 200 mW in the SOT-23 package. It is qualified according to AEC-Q101 standards for automotive applications.
Feature Summary
- Integrated dual bias resistors simplify circuit design by eliminating external components.
- Automotive qualification ensures reliability under demanding environmental conditions.
- High-speed switching capability suitable for interface and drive circuits.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Drive circuits
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure storage conditions remain within specified limits to maintain junction temperature integrity and prevent moisture damage during handling.
Selection Notes
Select this component when a single NPN digital switch with 10 kΩ base resistance is required. Verify that the 50 V collector-emitter rating meets system voltage requirements. Consider the SOT-23 package dimensions for PCB layout constraints. Ensure thermal management supports the 200 mW dissipation limit at expected operating temperatures.
Part Context
This part belongs to the BCR133 series of NPN silicon digital transistors. It shares core electrical characteristics with variants like BCR133S and BCR133W but differs in physical packaging. The series is designed for general-purpose switching and logic interfacing tasks where compact size and integrated biasing are advantageous.
Replacement Considerations
BCR133E6327XT
FAQ
What is the typical value for the internal bias resistors?
Both the base resistor (R1) and emitter resistor (R2) have a typical value of 10 kΩ.
Is this component qualified for automotive use?
Yes, the BCR 133F E6327 is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCEsat) is 0.3 V at IC = 10 mA and IB = 0.5 mA.
