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The BCR 133L3 E6327 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SC75 surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 135°C. The transition frequency (fT) is 130 MHz, and the DC current gain (hFE) has a minimum value of 30.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the SC75 package matches the required footprint and pin configuration for the target PCB layout. Ensure thermal management strategies account for the specified junction-to-soldering point thermal resistance values during operation.
Select this component when dual isolated NPN switching functionality is required in a compact form factor. The SC75 package offers specific thermal and spatial advantages compared to standard SOT-23 variants. Verify that the 100 mA current rating and 50 V voltage limits align with the load requirements of the intended application circuit.
This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes various package options such as SOT-23, TSFP-3, TSLP-3-4, SOT363, and SC75. The BCR133L3 specifically denotes the version packaged in the SC75 format, distinguishing it from other physical configurations within the same functional family.
Direct replacements must match the SC75 package and dual-transistor isolation architecture. Cross-reference with other BCR133 series parts only if the package type is compatible. Verify that substitute components maintain the 10 kΩ resistor ratio and 50 V/100 mA ratings.