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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：PG-SC75-3D
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Overview
The BCR 133T E6327 is an NPN Silicon Digital Transistor from the Infineon BCR133 series, housed in a SC75 surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ with a ratio of 1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 109°C. The device features a DC current gain (hFE) minimum of 30, a transition frequency (fT) of 130 MHz, and operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Integrates dual bias resistors for simplified circuit design
- Optimized for switching, inverter, interface, and drive applications
- High thermal stability with defined power derating curves
Applications
- Switching circuits
- Inverter configurations
- Interface circuits
- Drive circuits
Procurement Notes
Verify component authenticity through authorized channels. Confirm datasheet revision and marking codes match the specific order code. Check for end-of-life status or obsolescence notices before finalizing procurement plans. Ensure storage conditions comply with moisture sensitivity levels specified in the manufacturer documentation.
Selection Notes
Select this component when a single NPN digital transistor with 10 kΩ base and emitter resistors is required in a compact SC75 footprint. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the 250 mW power dissipation limit and thermal resistance characteristics for the intended operating environment.
Part Context
This part belongs to the BCR133 series of NPN silicon digital transistors. The 'T' suffix indicates the SC75 package variant. Other series members include BCR133S (dual transistor), BCR133F, BCR133L3, and BCR133W, which share similar electrical characteristics but differ in packaging and pinout configurations.
Replacement Considerations
BCR133E6327XT
FAQ
What are the internal resistor values?
The BCR 133T includes two internal bias resistors, R1 and R2, both with a nominal value of 10 kΩ.
What is the maximum power dissipation?
The total power dissipation is 250 mW, provided the case temperature remains at or below 109°C.
What package type does the 'T' suffix denote?
The 'T' suffix denotes the SC75 surface-mount package.
