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The BCR 135 B6327 is an NPN silicon digital transistor from the Infineon BCR135 series, housed in a SOT-23 package. It integrates a single transistor with built-in bias resistors: R1 is typically 10 kΩ and R2 is typically 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 70, a transition frequency (fT) of 150 MHz, and a total power dissipation of 200 mW at case temperatures up to 102°C. It operates within a junction temperature range of -65°C to +150°C.
Verify component authenticity through authorized channels or official manufacturer documentation. Confirm that the specific ordering suffix matches the required package type and marking code. Ensure compliance with RoHS directives and check for any end-of-life status updates directly from Infineon Technologies before finalizing procurement plans.
Select this component when a compact NPN digital switch with integrated base drive is required. The 10 kΩ input resistor provides standard logic compatibility. Consider the BCR135S variant if dual isolated transistors are needed, or the BCR135W variant if a smaller SOT-323 footprint is preferred while maintaining similar electrical performance.
This part belongs to the BCR135 family of NPN silicon digital transistors. The series includes variants like BCR135S (dual transistor in SOT-363) and BCR135W (single transistor in SOT-323). All share common electrical specifications but differ in pin configuration and physical package dimensions to suit various PCB layout constraints.
Direct substitutes must match the NPN polarity, 50V VCEO rating, 100mA IC limit, and ~10kΩ/47kΩ resistor ratio. Verify thermal resistance and package compatibility. Cross-reference with other manufacturers' digital transistor arrays offering identical bias networks and SOT-23 packaging.