BCR 135F E6327

Overview

The BCR 135F E6327 is an NPN silicon digital transistor from the Infineon BCR135 series, housed in a SOT-323 package. It integrates bias resistors with R1 at 10 kΩ and R2 at 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and total power dissipation of 250 mW. The device features a minimum DC current gain (hFE) of 70, a transition frequency (fT) of 150 MHz, and operates within a junction temperature range up to 150°C.

Feature Summary

• Integrates internal bias resistors for simplified circuit design
• Qualified according to AEC-Q101 automotive standards
• Provides high switching speed with a transition frequency of 150 MHz

Applications

• Switching circuits
• Inverter applications
• Interface driver circuits

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as the datasheet specifies Pb-free packaging. Ensure storage conditions remain within specified limits to maintain reliability. Check for specific automotive qualification requirements if deploying in AEC-Q101 compliant systems.

Selection Notes

Select this component when a single NPN digital transistor with integrated biasing is required. The SOT-323 package suits space-constrained designs. Verify that the 100 mA current rating and 50 V voltage withstand capabilities align with the target application's load requirements.

Part Context

This part belongs to the BCR135 series, which includes variants like BCR135S and BCR135W. While other series members may offer dual transistors or different packages, the BCR135F specifically denotes the single NPN configuration in the SOT-323 form factor within this product family.

Replacement Considerations

Direct substitutes within the same series include BCR135E6327XTSA1 (SOT-23) and BCR135WH6327XTSA1 (SOT-323). Cross-package replacements require verifying pinout compatibility and thermal resistance characteristics.