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The BCR 135T E6327 is an NPN Silicon Digital Transistor from the Infineon BCR135 series, housed in a SC-75 (SOT-23) surface-mount package. It integrates bias resistors R1=10 kΩ and R2=47 kΩ to simplify switching circuit designs. Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and total power dissipation of 250 mW at case temperatures up to 128°C. The device features a minimum DC current gain of 70, a transition frequency of 150 MHz, and operates within a junction temperature range of -65°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and automotive qualification standards if applicable to the target system environment.
Select this component when a compact NPN digital transistor with integrated biasing is required. Consider the SC-75 package dimensions and thermal resistance characteristics relative to the PCB layout. Evaluate the 100 mA current limit and 50 V voltage rating against the maximum load requirements of the intended application.
This part belongs to the BCR135 family of NPN silicon digital transistors. Variants within the series offer different pin configurations and packages, such as SOT-23, TSFP-3, and TSLP-3-4, to accommodate various board space constraints while maintaining consistent electrical performance characteristics.
Direct substitutes include other BCR135 series variants like BCR135F or BCR135L3, provided the package type and pinout are compatible. Cross-brand replacements require careful verification of resistor values, hFE ranges, and thermal specifications.