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The BCR 139F E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies, designed for switching, inverter, interface, and driver circuits. It features a built-in bias resistor (R1) with a typical value of 22 kΩ. The device operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation is rated at 250 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630, a transition frequency (fT) of 150 MHz, and a collector-base capacitance of 3 pF. The component is housed in the TSFP-3 package.
Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement. Ensure the ordering code matches the required packaging format for automated assembly processes.
Select this component when a single NPN digital transistor with a 22 kΩ internal resistor is required. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Check that the 100 mA collector current capability aligns with the load requirements. Consider the thermal resistance values if operating near maximum power dissipation limits.
This part belongs to the BCR139 series of NPN silicon digital transistors from Infineon Technologies. The series includes variants such as BCR139L3 and BCR139T, which share similar electrical characteristics but may differ in packaging or marking codes. The E6327 suffix typically denotes reel packaging configuration.
Direct substitutes within the same family include BCR139L3 and BCR139T. Verify pinout compatibility and package dimensions (TSFP-3 vs. TSLP-3-4 vs. SC75) before substitution. Ensure replacement parts meet the same 50 V and 100 mA ratings.