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The BCR 139L3 E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies, designed for switching, inverter, interface, and driver circuits. It features a built-in bias resistor (R1) with a typical value of 22 kΩ. The device operates within a collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 150 MHz. The component is housed in the TSLP-3-4 package and offers a total power dissipation of 250 mW.
Verify the specific ordering suffix E6327 to confirm reel packaging specifications. Ensure compatibility with the TSLP-3-4 package footprint during PCB layout. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.
Select this component when a high-gain NPN digital transistor with a 22 kΩ internal bias resistor is required. Consider the 50 V collector-emitter voltage rating and 100 mA current capacity against circuit demands. Evaluate the TSLP-3-4 package dimensions for space constraints.
This part belongs to the BCR139 series of NPN silicon digital transistors. Variants such as BCR139F and BCR139T share similar electrical characteristics but differ in package types (TSFP-3 and SC75 respectively). The E6327 suffix specifically denotes the tape and reel packaging configuration for automated assembly.
Direct substitutes within the same family include BCR139F and BCR139T, provided the package type difference is accommodated. Verify pinout compatibility and thermal resistance values when replacing across different packages.