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The BCR141F E6327 is an NPN silicon digital transistor from Infineon Technologies, housed in a TSFP-3 surface-mount package. It integrates bias resistors with nominal values of R1=22kΩ and R2=22kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 128°C. The device features a DC current gain (hFE) minimum of 50, a transition frequency (fT) of 130 MHz, and a junction temperature range up to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and reel configuration. Confirm RoHS compliance status and check for any discontinuation notices or alternative part recommendations directly from the manufacturer before finalizing procurement plans.
Select this component when a single NPN digital transistor with integrated biasing is required in a compact TSFP-3 footprint. Ensure the application voltage does not exceed 50 V and that the thermal management supports the specified 250 mW power dissipation limit within the operating temperature range.
This component belongs to the BCR141 series of NPN silicon digital transistors. The series includes variants such as BCR141S, BCR141U, and BCR141W, which differ primarily in their physical packaging configurations while maintaining similar electrical characteristics and internal resistor ratios.
Consult the official datasheet for cross-reference information. Verify pinout compatibility and electrical ratings if substituting with other NPN digital transistors from different manufacturers.