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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSLP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：PG-TSLP-3-4
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Overview
The Infineon BCR141L3E6327 is an NPN silicon digital transistor housed in a SC74 package. It features built-in bias resistors with R1 and R2 both at 22 kΩ, yielding a typical resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a maximum total power dissipation of 250 mW at a case temperature up to 135°C. Key electrical characteristics include a DC current gain (hFE) minimum of 50, a transition frequency (fT) of 130 MHz, and a collector-base cutoff current (ICBO) maximum of 100 nA.
Feature Summary
- Integrates dual bias resistors for simplified circuit design
- Provides high-speed switching capabilities via defined transition frequency
- Offers robust thermal performance with elevated maximum power dissipation
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging details and availability status. Ensure that the SC74 package variant matches the required board layout specifications before finalizing procurement orders.
Selection Notes
Select this component when a single NPN digital transistor with equal bias resistors is required. The SC74 package offers a compact footprint suitable for space-constrained designs. Verify that the 250 mW power dissipation rating aligns with the thermal management strategy of the target application.
Part Context
This part belongs to the BCR141 series of NPN silicon digital transistors from Infineon Technologies. The series includes various package options such as SOT-23, TSFP-3, TSLP-3-4, SOT363, SC75, and SOT323. The L3 suffix specifically denotes the SC74 package configuration within this product family.
Replacement Considerations
BCR141E6327HTSA1
FAQ
What are the values of the internal bias resistors?
The internal bias resistors R1 and R2 are both 22 kΩ.
What is the maximum total power dissipation for the BCR141L3?
The maximum total power dissipation is 250 mW at a case temperature (TS) less than or equal to 135°C.
What is the transition frequency of this transistor?
The transition frequency (fT) is typically 130 MHz at IC = 10 mA and VCE = 5 V.
