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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TSFP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：150 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：PG-TSFP-3
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Overview
The BCR 142F E6327 is an NPN silicon digital transistor from the Infineon BCR142 series, designed for switching and interface applications. It integrates a single transistor with built-in bias resistors R1 (22 kΩ) and R2 (47 kΩ), yielding a resistor ratio of 0.47. The device operates in a SOT-23 package with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 5 mA, a transition frequency (fT) of 150 MHz, and a maximum total power dissipation of 200 mW. It supports junction temperatures up to 150 °C and complies with AEC-Q101 standards.
Feature Summary
- Integrated bias network consisting of a base resistor and emitter resistor to simplify circuit design.
- Qualified according to AEC-Q101 automotive electronic council standards.
- Lead-free packaging compliant with RoHS directives.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'F' against official documentation to confirm tape and reel specifications or marking variations. Confirm that the component meets AEC-Q101 requirements if used in automotive contexts. Ensure thermal management aligns with the 200 mW dissipation limit in the SOT-23 package.
Selection Notes
Select this component when a pre-biased NPN transistor with a 22 kΩ base resistor is required. The 0.47 resistor ratio is suitable for standard logic interfacing. Consider the 150 MHz transition frequency for high-speed switching needs within the 50 V and 100 mA limits.
Part Context
This part belongs to the BCR142 series of NPN silicon digital transistors. The series includes variants like BCR142W in SOT-323 packages. The BCR142F specifically denotes the SOT-23 configuration with integrated bias resistors, distinguishing it from discrete transistors or other resistance values in the family.
Replacement Considerations
Check for direct equivalents within the BCR142 series, such as BCR142E6327HTSA1, ensuring package compatibility between SOT-23 and SOT-323 if applicable. Verify that substitute components maintain the same 22 kΩ/47 kΩ resistor configuration and hFE minimum of 70.
FAQ
What are the internal resistor values?
The device contains a base resistor (R1) of 22 kΩ and an emitter resistor (R2) of 47 kΩ.
Is this component qualified for automotive use?
Yes, the BCR142 series is qualified according to AEC-Q101 standards.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
