BCR 142T E6327

Overview

The BCR 142T E6327 is an NPN silicon digital transistor from the Infineon BCR142 series, housed in a SC-75 (TSFP-3) surface-mount package. It integrates bias resistors with typical values of R1=22 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 70 at IC=5 mA. The device features a transition frequency (fT) of 150 MHz and supports a junction temperature up to 150°C.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• High switching speed suitable for interface and driver applications
• Robust thermal performance with defined power dissipation limits

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package variant. Check for end-of-life status as availability may be limited. Ensure compliance with RoHS directives if applicable to the target assembly process.

Selection Notes

Select this component when a single NPN digital transistor with high input impedance is required. The SC-75 package offers a compact footprint compared to standard SOT-23. Consider the integrated resistor ratio for base drive requirements. Evaluate thermal resistance characteristics against the expected operating temperature range.

Part Context

This part belongs to the BCR142 family of NPN digital transistors. Variants like BCR142F and BCR142L3 share similar electrical characteristics but differ in packaging and thermal properties. The 'T' suffix specifically denotes the TSFP-3/SC-75 package type used in this configuration.

Replacement Considerations

Direct substitutes within the same family include BCR142F and BCR142L3, though package differences must be accounted for. Cross-brand equivalents require verification of pinout compatibility and electrical parameter alignment.