BCR 146T E6327

BCR 146T E6327

  • Description:TRANS PREBIAS NPN 50V 0.07A SC75
  • Series:-

SKU:afaf12fb5f88 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.07A SC75
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):70 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC75-3D

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BCR 146T E6327

Overview

The BCR 146T E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies, housed in a SOT-23 surface-mount package. It integrates internal bias resistors with typical values of R1 = 47 kΩ and R2 = 22 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 70 mA. Key electrical characteristics include a DC current gain (hFE) of at least 50 at IC = 5 mA, a transition frequency (fT) of 150 MHz, and a maximum total power dissipation of 250 mW.

Feature Summary

  • Integrated bias resistor network for simplified circuit design
  • High-speed switching capability with defined transition frequency
  • Robust thermal performance within specified junction temperature limits

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance requirements prior to procurement. Ensure that the component's end-of-life or obsolescence status is evaluated against long-term production schedules before finalizing supply chain commitments.

Selection Notes

Select this component when an NPN digital transistor with integrated biasing is required for low-power switching tasks. The SOT-23 package is suitable for space-constrained designs. Verify that the 70 mA collector current and 50 V breakdown voltage meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the BCR 146 series of NPN silicon digital transistors from Infineon Technologies. The series includes variants such as BCR 146F, L3, and W, which differ primarily in their physical packages (TSFP-3, TSLP-3-4, SC75, SOT323). All variants share identical electrical characteristics but offer different form factors for diverse board layout needs.

Replacement Considerations

Direct substitutes within the same family include BCR 146F, BCR 146L3, and BCR 146W, provided the package type matches the PCB footprint. Cross-manufacturer replacements must match the NPN polarity, 50 V rating, 70 mA current limit, and integrated resistor values (approx. 47k/22k).

BCR 146T E6327BCR 146T E6327

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