BCR 148L3 E6327

Overview

The Infineon BCR 148L3 E6327 is an NPN silicon digital transistor housed in a SOT-23 package. It integrates bias resistors R1 and R2, both nominally 47 kΩ, with a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a maximum collector-base cutoff current (ICBO) of 100 nA, and a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 200 mW for the SOT-23 variant.

Feature Summary

• Integrates dual bias resistors to simplify circuit design
• Provides high DC current gain for efficient switching
• Qualified for automotive applications per AEC-Q101 standards

Applications

• Switching circuits
• Inverter applications
• Interface driver circuits

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and AEC-Q101 qualification status against official datasheets. Ensure storage conditions remain within specified limits to maintain reliability.

Selection Notes

Select this component for single-transistor NPN switching tasks requiring integrated base biasing. Verify that the 100 mA collector current and 50 V voltage ratings meet system requirements. Consider thermal constraints when designing for ambient temperatures exceeding 25°C.

Part Context

This part belongs to the BCR148 family of NPN silicon digital transistors. Variants include the BCR148S (dual transistor in SOT-363) and BCR148W (single transistor in SOT-323). All share similar electrical characteristics but differ in pin configurations and packaging.

Replacement Considerations

Direct substitutes include other BCR148 variants such as BCR148S or BCR148W if package compatibility allows. Cross-brand replacements require matching VCEO, IC, and internal resistor values.