BCR 149L3 E6327

Overview

The BCR 149L3 E6327 is an NPN silicon digital transistor manufactured by Infineon Technologies, featuring a built-in bias resistor of 47 kΩ. It operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 70 mA. The device provides a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C. The transition frequency (fT) reaches 150 MHz at IC = 10 mA. It is housed in the TSLP-3-4 surface-mount package.

Feature Summary

• Integrated bias resistor simplifies circuit design by eliminating external base components.
• High DC current gain supports efficient switching performance across various load conditions.
• Surface-mount packaging enables compact board layout for space-constrained applications.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision and package marking codes match specifications. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans.

Selection Notes

Select this component when a high-gain NPN digital switch with a 47 kΩ internal resistor is required. Ensure the application current remains within the 70 mA limit and voltage stays below 50 V. Verify thermal management capabilities align with the 250 mW dissipation rating in the chosen package.

Part Context

This part belongs to the BCR series of NPN silicon digital transistors produced by Infineon Technologies. The 'L3' suffix indicates the specific TSLP-3-4 package variant. These devices are designed to replace discrete resistor-transistor combinations in logic and interface applications.

Replacement Considerations

BCR149F and BCR149T are alternative packages within the same electrical family. Verify pinout compatibility and thermal resistance differences before substitution.