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The BCR 149T E6327 is an NPN silicon digital transistor featuring a built-in bias resistor of 47 kΩ. It operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 70 mA. The device provides a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA and VCE = 5 V, with a transition frequency (fT) of 150 MHz. Total power dissipation is rated at 250 mW for the TSFP-3 package. It functions within a junction temperature range of -65°C to +150°C.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm datasheet revision and lot traceability upon receipt. Ensure storage conditions comply with moisture sensitivity levels specified in the manufacturing documentation to prevent package degradation before soldering.
Select this component when a single NPN digital switch with a 47 kΩ internal base resistor is required. Verify that the 70 mA collector current limit meets load requirements. Consider alternative packages like TSFP-3 or TSLP-3-4 based on board space constraints and thermal management needs.
This part belongs to the BCR149 series of NPN silicon digital transistors manufactured by Infineon Technologies. The 'T' suffix indicates the specific SC75 surface-mount package variant. Other variants in the series include F and L3 packages, which share identical electrical characteristics but differ in physical dimensions and thermal resistance properties.
Direct substitutes must match the NPN configuration, 50 V VCEO rating, 70 mA IC limit, and 47 kΩ internal base resistor. Verify pinout compatibility (Base-Emitter-Collector) and package footprint (SC75) to ensure mechanical interchangeability without PCB redesign.