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The BCR 151T E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single NPN transistor with built-in bias resistors (R1 = 100kΩ, R2 = 100kΩ) in an SC75 surface-mount package. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 50 mA, and a total power dissipation of 250 mW at a case temperature of 109°C or lower. The device features a DC current gain (hFE) of 70 minimum, a transition frequency of 120 MHz typical, and operates within a junction temperature range of -65°C to 150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the SC75 package marking and date code against the provided datasheet specifications. Ensure compliance with RoHS directives and check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.
Select this component when a compact PNP digital solution with integrated biasing is required. The SC75 package suits space-constrained designs. Verify that the 50 mA collector current and 50 V voltage ratings align with the target application's load requirements. Consider the thermal resistance characteristics if operating near the maximum power dissipation limits.
This part belongs to the BCR151 series of PNP Silicon Digital Transistors from Infineon Technologies. The 'T' suffix denotes the SC75 surface-mount package variant. Other variants in the series include the F and L3 packages, which share similar electrical characteristics but differ in physical dimensions and thermal properties.
Direct substitutes are not explicitly listed in the provided documentation. Evaluate other PNP digital transistors with comparable 50V/50mA ratings and integrated bias resistors. Ensure pin compatibility and thermal resistance values match the existing PCB layout constraints before implementation.
The BCR 151T includes two built-in bias resistors: R1 is 100 kΩ and R2 is 100 kΩ.
The maximum total power dissipation is 250 mW, provided the case temperature (TS) is maintained at 109°C or lower.
The typical transition frequency (fT) is 120 MHz, measured at IC = 10 mA and VCE = 5 V.