BCR 153F E6327

Overview

The BCR 153F E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, featuring an integrated resistor network with R1 and R2 both at 2.2 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a maximum collector current of 100 mA. The device provides a DC current gain (hFE) of 20 and a transition frequency (fT) of 200 MHz. Total power dissipation is rated at 250 mW, with a junction temperature range up to 150 °C. It is housed in the TSFP-3 surface-mount package.

Feature Summary

• Integrated dual resistors for simplified circuit design
• High-speed switching capability with defined transition frequency
• Robust thermal performance suitable for compact applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision and manufacturing date codes against project requirements. Ensure proper handling procedures are followed during storage and assembly to maintain electrical integrity and prevent electrostatic discharge damage.

Selection Notes

Select this component when a PNP digital transistor with specific 2.2 kΩ internal biasing is required. Consider the TSFP-3 package dimensions for PCB layout compatibility. Evaluate thermal resistance characteristics relative to the expected operating ambient temperature and power dissipation limits.

Part Context

This part belongs to the BCR153 series of PNP silicon digital transistors. The series includes variants like BCR153U and BCR153T, which offer different packaging options such as SC75 and TSLP-3-4. The BCR153F specifically utilizes the TSFP-3 package configuration.

Replacement Considerations

Check for direct pin-compatible alternatives within the same BCR153 family, such as BCR153T or BCR153L3, ensuring package and electrical parameter alignment before substitution.