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The BCR 153T E6327 is a PNP silicon digital transistor from the BCR153 series, housed in an SC75 package. It features built-in resistors with R1 and R2 both at 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) of 100 mA. Total power dissipation is rated at 250 mW when the soldering point temperature is maintained at or below 109°C. The junction temperature range extends up to 150°C, with a storage temperature range spanning from -65°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the SC75 package marking matches the specified type code. Ensure thermal management meets the required soldering point temperature limits to maintain the 250 mW power dissipation rating during operation.
Select this component for PNP digital transistor requirements where integrated base and emitter resistors are needed. The SC75 package offers a compact footprint suitable for surface-mount assembly. Verify that the 50 V collector-emitter voltage and 100 mA collector current ratings align with the specific circuit load and supply voltage constraints.
This part belongs to the BCR153 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR153F and BCR153L3, which differ primarily in their packaging types (TSFP-3 and TSLP-3-4 respectively). All variants share similar electrical characteristics but offer different physical form factors for board layout flexibility.
BCR153F and BCR153L3 are electrically equivalent alternatives within the same series, differing only in package style.