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The BCR158F E6327 is a PNP silicon digital transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 at 2.2 kΩ and R2 at 47 kΩ. It operates with a collector-emitter voltage of 50 V and supports a maximum collector current of 100 mA. The device offers a typical DC current gain (hFE) of 70 at 5 mA and a transition frequency of 200 MHz. It is available in SOT-23 and SOT-323 packages, complies with RoHS standards, and meets AEC-Q101 qualification requirements for automotive applications.
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure that the component meets the required environmental standards for the intended deployment environment. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a PNP digital transistor with built-in biasing is required for space-constrained designs. The SOT-23 package is suitable for general surface-mount applications, while the SOT-323 variant offers a smaller footprint. Consider the 50 V collector-emitter voltage rating and 100 mA current capacity to ensure adequate headroom for the target switching load.
The BCR158 series includes variants like the BCR158W, which utilizes the SOT-323 package compared to the standard SOT-23 used by the base BCR158 model. These devices are part of Infineon's portfolio of pre-biased transistors designed to reduce board space and assembly complexity. The series is engineered for high-frequency switching applications requiring reliable performance under varying thermal conditions.
Check for direct equivalents within the BCR158 series, such as the BCR158W, if package compatibility differs. Verify that any substitute maintains the same resistor values (R1=2.2 kΩ, R2=47 kΩ) and electrical characteristics, including VCEO and hFE, to ensure functional parity in the existing circuit design.