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The BCR 158T E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, packaged in the SC-75 (SCD80) surface-mount format. It integrates internal bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a resistor ratio of approximately 0.047. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 250 mW at a case temperature up to 109°C. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm the SC-75 package variant and tape-and-reel specifications. Confirm availability status as distribution data may indicate end-of-life or discontinuation phases for this specific marking code.
Select the BCR 158T variant specifically when the SC-75 package geometry is required for board layout constraints. Ensure the design accommodates the 250 mW power dissipation limit relative to the expected case temperature environment. Verify that the 2.2 kΩ input resistance aligns with the driving source impedance requirements.
This component belongs to the BCR158 family of PNP digital transistors. While other variants like BCR158F or BCR158W share identical electrical parameters, they utilize different packages such as SOT-23 or SOT-323. The 'T' suffix explicitly identifies the SC-75 package form factor within this product line.
Direct functional substitutes within the same package include BCR158T HTSA1. For alternative packages, consider BCR158F (SOT-23) or BCR158W (SOT-323), provided the mechanical footprint allows for modification.