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The BCR 162 B6327 is a PNP Silicon Digital Transistor from Infineon Technologies, housed in an SOT-23 package. It integrates bias resistors R1 and R2, both nominally 4.7 kΩ with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 20 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a total power dissipation (Ptot) of 200 mW. Operating junction temperature ranges up to 150 °C.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and lead-free material declarations directly with the manufacturer or authorized distributors before procurement. Ensure compatibility with existing PCB footprints for the SOT-23 form factor.
Select this component for PNP digital switching applications requiring integrated base biasing. Verify that the required collector current does not exceed 100 mA and the voltage rating meets the 50 V limit. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or continuous duty cycles.
This part belongs to the BCR162 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching and logic interface applications where space-saving integration of resistors is beneficial. The B6327 suffix typically denotes specific packaging and handling configurations within the product line.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the PNP polarity, SOT-23 package, and equivalent electrical ratings for VCEO, IC, and internal resistor values.