BCR 162F E6327

Overview

The BCR 162F E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, housed in an SOT-23 package. It features built-in bias resistors with R1 and R2 both at 4.7 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW. The device has a transition frequency (fT) of 200 MHz and operates within a junction temperature range up to 150 °C.

Feature Summary

• Integrated dual bias resistor network for simplified circuit design
• Qualified for automotive applications according to AEC-Q101 standards
• RoHS compliant Pb-free packaging

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix 'F' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for low-power switching applications requiring integrated base drive resistors. Ensure the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum circuit demands. Verify that the SOT-23 thermal resistance characteristics are sufficient for the expected operating temperature and power dissipation levels.

Part Context

This part belongs to the BCR162 series of PNP digital transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching and logic interface applications where space-saving integration of bias resistors is beneficial.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may not match the specific internal resistor ratios or AEC-Q101 automotive qualification.