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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TSLP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：PG-TSLP-3-4
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Overview
The BCR 162L3 E6327 is a PNP silicon digital transistor featuring integrated bias resistors (R1 = 4.7 kΩ, R2 = 4.7 kΩ) in a TSLP-3-4 package. It provides a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device supports a total power dissipation of 250 mW at a case temperature up to 135°C, with a junction temperature rating of 150°C. Key electrical characteristics include a DC current gain (hFE) of 20, a transition frequency (fT) of 200 MHz, and a collector-emitter saturation voltage of 0.3 V.
Feature Summary
- Integrated dual bias resistors for simplified circuit design
- High-speed switching capability with 200 MHz transition frequency
- Robust thermal performance with 250 mW power dissipation
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix E6327 corresponds to the reel packaging configuration required for your assembly line. Confirm that the TSLP-3-4 package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Selection Notes
Select this component when a PNP digital transistor with built-in biasing is required for high-frequency switching. Ensure the 100 mA collector current limit and 50 V breakdown voltage meet the load requirements of the target application circuit.
Part Context
This part belongs to the BCR162 family of PNP silicon digital transistors manufactured by Infineon Technologies. The L3 variant specifically utilizes the TSLP-3-4 surface-mount package, distinguishing it from other variants like the SOT23 or TSFP-3 packages within the same functional series.
Replacement Considerations
BCR162E6327XT
FAQ
What are the values of the internal bias resistors?
The internal bias resistors are R1 = 4.7 kΩ and R2 = 4.7 kΩ.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCEsat) is 0.3 V at IC = 10 mA and IB = 0.5 mA.
What is the transition frequency of the BCR 162L3?
The transition frequency (fT) is typically 200 MHz at IC = 10 mA and VCE = 5 V.
