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The BCR 162T E6327 is a PNP silicon digital transistor manufactured by Infineon Technologies, housed in the SC-75 surface-mount package. It integrates bias resistors with typical values of R1 = 4.7 kΩ and R2 = 4.7 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 109°C. The device features a DC current gain (hFE) minimum of 20, a transition frequency (fT) of 200 MHz, and an operating junction temperature range from -65°C to +150°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to final procurement decisions.
Select this component when a PNP digital transistor with integrated biasing is required. Verify that the SC-75 package dimensions fit the PCB layout constraints. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the BCR162 family of PNP digital transistors. Variants such as BCR162, BCR162F, and BCR162L3 share similar electrical characteristics but differ in physical packaging options including SOT23, TSFP-3, and TSLP-3-4. The 'T' suffix specifically denotes the SC-75 package variant.
Direct substitutes within the same family include BCR162, BCR162F, and BCR162L3, provided the package type is compatible with the existing footprint.