BCR 164L3 E6327

Overview

The BCR 164L3 E6327 is a PNP silicon digital transistor featuring an integrated bias resistor network. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes built-in resistors R1 (4.7 kΩ) and R2 (10 kΩ). Total power dissipation is rated at 250 mW for junction temperatures up to 135°C. The transition frequency reaches 160 MHz, and the DC current gain is specified at a minimum of 30.

Feature Summary

• Integrated dual-bias resistor network simplifies switching circuit design
• High-speed operation supported by 160 MHz transition frequency
• Robust thermal performance with low junction-to-soldering point resistance

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the manufacturer's documentation. Ensure storage conditions remain within the -65°C to 150°C range to maintain device integrity prior to assembly.

Selection Notes

Select this component for PNP logic interface requirements where internal biasing reduces external component count. The 50 V rating suits low-voltage digital systems. Verify that the 100 mA current limit meets load demands and that the TSLP-3-4 package fits the PCB footprint constraints.

Part Context

This part belongs to the BCR164 series of PNP digital transistors. Variants include BCR164F in TSFP-3 packages and BCR164T in SC75 packages. All share identical electrical characteristics but differ in physical housing dimensions and thermal resistance profiles.

Replacement Considerations

BCR164F and BCR164T are electrically equivalent alternatives within the same series. Substitution requires verification of package compatibility, specifically comparing TSLP-3-4 against TSFP-3 or SC75 footprints.